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A Product Line of
Diodes Incorporated
DMN3024LSD
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
?
?
?
?
?
?
0.5
±100
V
μ A
nA
I D = 250 μ A, V GS = 0V
V DS = 30V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
Reverse recovery time (Note 9)
Reverse recovery charge (Note 9)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
1.0
?
?
?
?
?
?
16.5
0.82
12
4.8
3.0
0.024
0.036
?
1.2
?
?
V
?
S
V
ns
nC
I D = 250 μ A, V DS = V GS
V GS = 10V, I D = 7.0A
V GS = 4.5V, I D = 6.0A
V DS = 15V, I D = 7.1A
I S = 1.7A, V GS = 0V
I S = 2.2A, di/dt= 100A/ μ s
DYNAMIC CHARACTERISTICS ( Note 9)
Input Capacitance
C iss
?
608
?
pF
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
C oss
C rss
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
?
?
?
132
71
6.3
12.9
2.5
2.5
2.9
3.3
16
8
?
?
?
?
?
?
?
?
?
?
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
V DS = 15V, V GS = 0V
f= 1MHz
V DS = 15V, V GS = 4.5V
I D = 7A
V DS = 15V, V GS = 10V
I D = 7A
V DD = 15V, V GS = 10V
I D = 1A, R G ? 6.0 Ω
Notes:
8. Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
DMN3024LSD
Document Revision: 3
4 of 8
www.diodes.com
July 2009
? Diodes Incorporated
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